NVM memory HKMG integration technology

ABSTRACT

The present disclosure relates to a method of forming an integrated circuit (IC). In some embodiments, a substrate is provided comprising a memory region and a logic region disposed adjacent to the memory region. The memory region comprises a non-volatile memory (NVM) device having a control gate electrode and a select gate electrode disposed between two neighboring source/drain regions over a substrate. The control gate electrode and the select gate electrode comprise polysilicon. The logic region comprises a logic device including a metal gate electrode disposed between two neighboring source/drain regions over a logic gate dielectric and having bottom and sidewall surfaces covered by a high-k gate dielectric layer.

REFERENCE TO RELATED APPLICATION

This Application is a Divisional of U.S. application Ser. No.15/167,070, filed on May 27, 2016, the contents of which are herebyincorporated by reference in their entirety.

BACKGROUND

Embedded memory is a technology that is used in the semiconductorindustry to improve performance of an integrated circuit (IC). Embeddedmemory is a non-stand-alone memory, which is integrated on the same chipwith a logic core and which supports the logic core to accomplish anintended function. High-performance embedded memory enables high-speedand wide bus-width capability, which limits or eliminates inter-chipcommunication.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of some embodiments of anintegrated circuit (IC) comprising a high-k metal gate (HKMG)non-volatile memory (NVM) device.

FIG. 2 illustrates a cross-sectional view of some additional embodimentsof an IC comprising a HKMG NVM device.

FIG. 3 illustrates a cross-sectional view of some additional embodimentsof an IC comprising a HKMG NVM device.

FIGS. 4-15 illustrate a series of cross-sectional views of someembodiments of a method for manufacturing an IC comprising a HKMG NVMdevice.

FIG. 16 illustrates a flow diagram of some embodiments of a method formanufacturing an IC comprising a HKMG NVM device.

FIGS. 17-25 illustrate a series of cross-sectional views of someadditional embodiments of a method for manufacturing an IC comprising aHKMG NVM device.

FIG. 26 illustrates a flow diagram of some additional embodiments of amethod for manufacturing an IC comprising a HKMG NVM device.

FIGS. 27-36 illustrate a series of cross-sectional views of someadditional embodiments of a method for manufacturing an IC comprising aHKMG NVM device.

FIG. 37 illustrates a flow diagram of some additional embodiments of amethod for manufacturing an IC comprising a HKMG NVM device.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In emerging technology nodes, the semiconductor industry has begun tointegrate logic devices and memory devices on a single semiconductorchip. This integration improves performance over solutions where twoseparate chips—one for memory and another for logic—cause undesirabledelays due to wires or leads that connect the two chips. In addition,the processing costs for integrating memory and logic devices on thesame semiconductor chip are reduced due to the sharing of specificprocess steps used to fabricate both types of devices. One common typeof embedded memory is embedded flash memory, which may include an arrayof flash memory cells. A flash memory cell comprises a charge trappingcomponent, such as a floating gate or a charge trapping layer, used tostore charges (e.g. electrons/holes) regardless whether the power isapplied. A pair of control gate and select gate is disposed one next toanother for write/read of the flash memory cell.

High-k metal gate (HKMG) technology has also become one of thefront-runners for the next generation of CMOS devices. HKMG technologyincorporates a high-k dielectric to increase transistor capacitance andreduce gate leakage. A metal gate electrode is used to help withFermi-level pinning and to allow the gate to be adjusted to lowthreshold voltages. By combining the metal gate electrode and the high-kdielectric, HKMG technology makes further scaling possible and allowsintegrated chips to function with reduced power.

The present disclosure relates to an integrated circuit (IC) thatcomprises a small scale and high performance non-volatile memory (NVM)device integrated with a high-k metal gate (HKMG) logic device, and amethod of formation. In some embodiments, the integrated circuitcomprises a memory region and an adjacent logic region. The logic regioncomprises a logic device including a metal gate electrode having bottomand sidewall surfaces covered by a high-k gate dielectric layer anddisposed over a logic gate dielectric. The memory region comprises anon-volatile memory (NVM) device including a control gate electrode anda select gate electrode disposed between two neighboring source/drainregions over a substrate. In some embodiments, the control gateelectrode and the select gate electrode comprise polysilicon, and areseparated from the substrate by a continuous memory gate dielectric. Byintegrating the HKMG logic device and the NVM memory device,manufacturing processes are simplified such that further scaling becomespossible in emerging technology nodes.

FIG. 1 illustrates a cross-sectional view of some embodiments of an IC100 comprising a HKMG NVM device including a semiconductor memory deviceintegrated with a HKMG logic device. The IC 100 is disposed on asubstrate 106 that includes a memory region 102 and a logic region 104,which are isolated by an isolation structure 105, such as a shallowtrench isolation (STI) structure or a deep trench isolation (DTI)structure. The logic region 104 comprises a logic device 112, whichincludes a first transistor 112 a and a second transistor 112 b; whilethe memory region 102 includes a non-volatile memory device 118, whichincludes a first memory cell 118 a and a second memory cell 118 b.Though FIG. 1 only illustrates two transistors in the logic region 104and only two memory cells in the memory region 102, it will beappreciated that the disclosure can be extended to include number oftransistors in the logic region 104 and any number of memory cells inthe memory region 102.

In some embodiments, the first transistor 112 a (e.g. a NMOS transistor)comprises a first metal gate electrode 114 and the second transistor 112b (e.g. a PMOS transistor) comprises a second metal gate electrode 158.The first metal gate electrode 114 is disposed between two source/drainregions 125 a, 125 b; and the second metal gate electrode 158 isdisposed between two source/drain regions 127 a, 127 b. The first andsecond metal gate electrodes 114, 158 have their bottom and sidewallsurfaces covered by a high-k gate dielectric layer 116 and are disposedover a logic gate dielectric 132. By making use of HKMG structure intransistors of the logic device 112, transistor capacitance (and therebydrive current) is increased and gate leakage and threshold voltage arereduced.

In some embodiments, the first metal gate electrode 114 comprises a coremetal layer 146 separated from the high-k gate dielectric layer 116 by abarrier layer 144. The barrier layer 144 protects the core metal layer146 from diffusing into surrounding materials. In some embodiments, thecore metal layer 146 comprises copper (Cu), tungsten (W) or aluminum(Al), or their alloys, for example; and the barrier layer 144 cancomprise metal materials such as titanium (Ti), tantalum (Ta), zirconium(Zr), or their alloys, for example. In some embodiments, the high-k gatedielectric layer 116 comprises hafnium oxide (HfO), hafnium siliconoxide (HfSiO), hafnium aluminum oxide (HfAlO), or hafnium tantalum oxide(HMO), for example.

In some embodiments, the second metal gate electrode 158 also comprisesa core metal layer 156 separated from the high-k gate dielectric layer116 by the barrier layer 144. However, to alter the work functions ofthe metal gates, the second metal gate electrode 158 is made of adifferent metal than the first metal gate electrode 114. The secondmetal gate electrode 158 can also have a different thickness from thefirst metal gate electrode 114. In some embodiments, the barrier layer144 can be the same material and/or thickness for the second metal gateelectrode 158 as for the first metal gate electrode 114.

In some embodiments, the memory region 102 includes a commonsource/drain region 150 which is shared by the first and second memorycells 118 a, 118 b; while individual source/drain regions 126 aredisposed about outer edges of the first and second memory cells 118 a,118 b. A pair of control gate electrodes 122 is separated from thesubstrate 106 by corresponding floating gates 124. A pair of select gateelectrodes 120 are disposed at opposite sides of the pair of controlgate electrodes 122 and separated from the substrate 106 by a selectgate dielectric 134. Thus, a control gate electrode 122 andcorresponding select gate electrode 120 on one side of the common source150 establish a first control gate/select gate pair; while a controlgate electrode 122 and corresponding select gate electrode 120 on theother side of the common source 150 establish a second controlgate/select gate pair.

The floating gates 124 are disposed on a floating gate dielectric 138and have upper surfaces covered by an inter-poly dielectric 136. In someembodiments, a control gate spacer 140 can be disposed on the inter-polydielectric 136 and along sidewalls of the pair of control gateelectrodes 122. A floating gate spacer 128 can be disposed on thefloating gate dielectric 138 and along outer sidewalls of the pair ofthe floating gates 124. In some embodiments, the floating gate spacer128 may comprise one or more layers of oxide or nitride. For example,the floating gate spacer 128 may include a multi-layer structure such asan ONO structure having a nitride layer sandwiched between two oxidelayers, or a NON structure having an oxide layer sandwiched between twonitride layers. The floating gate dielectric 138 and the inter-polydielectric 136 can have thicknesses greater than a thickness of theselect gate dielectric 134. In some embodiments, the control gateelectrodes 122 and the select gate electrodes 120 have cuboid shapes,which have planar upper surfaces coplanar with an upper surface of themetal gate electrode 114.

An erase gate electrode 152 can be disposed between inner sides of thepair of the floating gates 124 over the common source 150. A commonsource/drain dielectric 148 can separate the erase gate 152 from thecommon source 150, and a tunneling dielectric layer 154 can separate theerase gate 152 from the floating gates 124. The erase gate electrode 152may have a planar upper surface coplanar with an upper surface of thecontrol gate electrode 122 and the metal gate electrode 114.

In some embodiments, the select gate electrode 120 and the control gateelectrode 122 comprise a different material than the metal gateelectrode 114. For example, in some embodiments, the select gateelectrode 120 and the control gate electrode 122 may comprise dopedpolysilicon. In some embodiments, the select gate electrode 120 may beconnected to a word line, which is configured to control access of theNVM device 118. During operation, charges (e.g. electrons) can betrapped in the floating gate 124, setting a NVM memory cell to one logicstate (e.g. logical “0”), and can be removed from the floating gate 124by the erase gate electrode 152 to change the NVM memory cell to anotherlogic state (e.g. logical “1”).

In some embodiments, a sidewall spacer 130 is disposed on an uppersurface of the substrate 106 and along outer sidewalls of the pair ofthe select gate electrodes 120. The sidewall spacer 130 is also disposedalong sidewalls of the metal gate electrode 114 and the logic gatedielectric 132. In some embodiments, the sidewall spacer 130 and thesidewall spacer 130 can be made of silicon nitride or silicon oxide. Thesidewall spacer 130 and the sidewall spacer 130 may have upper surfacesthat are aligned with upper surfaces of the metal gate electrode 114,the select gate electrode 120, and the control gate electrode 122. Thelogic region 104 and the memory region 102 may be laterally separatedfrom one another by an inter-layer dielectric layer 110 arranged overthe substrate 106. In some embodiments, the inter-layer dielectric layer110 may comprise a low-k dielectric layer, an ultra low-k dielectriclayer, an extreme low-k dielectric layer, and/or a silicon dioxidelayer. Though not shown in FIG. 1, in some embodiments, one or more ofthe plurality of contacts may extend through the inter-layer dielectriclayer 110 and be coupled to the source/drain regions 126. In someembodiments, the plurality of contacts may comprise a metal such astungsten, copper, and/or aluminum.

In some embodiments, a contact etch stop layer 108 separates theinter-layer dielectric layer 110 from the logic device 112, the NVMdevice 118 and the substrate 106. The contact etch stop layer 108 mayhave a ‘U’ shaped structure and line the logic device 112, the NVMdevice 118 and an upper surface of the substrate 106. The contact etchstop layer 108 may comprise a planar lateral component connecting afirst vertical component abutting the sidewall spacer 130 arranged alonga side of the NVM device 118 and a second vertical component abuttingthe sidewall spacer 130 arranged along a side of the logic device 112.Using the inter-layer dielectric layer 110 and the contact etch stoplayer 108 to isolate the logic device 112 and the NVM device 118 allowsfor high device density to be achieved.

FIG. 2 illustrates a cross-sectional view of some alternativeembodiments of an IC 200 comprising a HKMG NVM device including asemiconductor memory device integrated with a HKMG logic device. The IC200 comprises a memory region 102 and a logic region 104 disposedadjacent to the memory region 102. The logic region 104 comprises alogic device 112 disposed over a substrate 106, which includes a firsttransistor 112 a and a second transistor 112 b. In some embodiments, thelogic region 104 comprises a first metal gate electrode 114 havingbottom and sidewall surfaces lined by a high-k gate dielectric layer 116and disposed over a logic gate dielectric 132. In some embodiments, thefirst metal gate electrode 114 may comprise a core metal layer 146separated from the high-k gate dielectric layer 116 by a barrier layer144, which protects the core metal layer 146 from contamination. Bymaking use of HKMG structure in transistors of the logic device 112,transistor capacitance (and thereby drive current) is increased and gateleakage and threshold voltage are reduced.

In some embodiments, the memory region 102 comprises a non-volatilememory (NVM) device 118 including a pair of memory cells 118 a, 118 bthat reside over the substrate 106. Each of the memory cells 118 a, 118b comprises a gate structure that is arranged over a channel regionbetween source/drain regions 126. A common source/drain region 150 isshared by the pair of memory cells 118 a, 118 b. The gate structure ofthe memory cell (e.g. 118 a, 118 b) comprises a pair of a select gateelectrode 120 and a control gate electrode 122, and have bottom surfacesof both the select gate electrode 120 and the control gate electrode 122separated from an upper surface of the substrate 106 by a memory gatedielectric 204. A charge trapping layer 202 is arranged betweenneighboring sidewalls of the select gate electrode 120 and the controlgate electrode 122, and extends under the control gate electrode 122. Insome embodiments, the select gate electrode 120 and the control gateelectrode 122 have cuboid shapes with coplanar top surfaces. In someembodiments, the select gate electrode 120 and the control gateelectrode 122 comprise doped polysilicon; however, in other embodimentsthe select gate electrode 120 and the control gate electrode 122 can bemade by other conductive materials such as metal, for example. In someembodiments, the charge trapping layer 202 comprises a first oxidelayer, a nitride layer, and a second oxide layer or, which can bereferred to as an oxide-nitride-oxide (ONO) structure. In some otherembodiments, the charge trapping layer 202 comprises a first oxidelayer, a layer of sphere-like silicon dots, and a second oxide layer.During operation of the memory cell, the first and/or second oxidelayers are structured to promote electron tunneling to and from thenitride layer or the silicon dots layer, such that the nitride layer orthe silicon dots layer can retain trapped electrons that alter thethreshold voltage of the cell in a manner that corresponds to a datastate stored in the cell.

In some embodiments, a conformal contact etch stop layer 108 and aninter-layer dielectric layer 110 are disposed between the memory region102 and the logic region 104 for isolation. The contact etch stop layer108 may have a ‘U’ shaped structure and line neighboring sidewalls ofthe logic device 112, the NVM device 118 and an upper surface of thesubstrate 106. The contact etch stop layer 108 may comprise a planarlateral component connecting a first vertical component abutting a firstportion of a sidewall spacer 130 arranged along a side of the controlgate electrode 122 and a second vertical component abutting a secondportion of sidewall spacer 130 arranged along a side of the metal gateelectrode 114. Using the inter-layer dielectric layer 110 and thecontact etch stop layer 108 to isolate the logic device 112 and the NVMdevice 118 allows for high device density to be achieved.

FIG. 3 illustrates a cross-sectional view of some alternativeembodiments of an IC 300 comprising a HKMG NVM device including asemiconductor memory device integrated with a HKMG logic device. As somealternative embodiments of the HKMG NVM devices shown in FIG. 1 and FIG.2, the IC 300 comprises a memory region 102 having a select gateelectrode 120 with a cuboid shape and a control gate electrode 122 withan ‘L’ shape. The select gate electrode 120 and the control gateelectrode 122 are disposed over a memory gate dielectric 204. In someembodiments, a cap spacer 302 is disposed along a ledge portion of thecontrol gate electrode 122 locates at one side of the control gateelectrode 122 opposite to the other side where the select gate electrode120 locates. A charge trapping layer 202 is arranged between neighboringsidewalls of the select gate electrode 120 and the control gateelectrode 122, and extends under the control gate electrode 122. In someembodiments, the select gate electrode 120 and the control gateelectrode 122 comprise doped polysilicon. In other embodiments theselect gate electrode 120 and the control gate electrode 122 can be madeby other conductive materials such as metal, for example.

A logic region 104 adjacent to the memory region 102 comprises atransistor with a first metal gate electrode 114 lined by a high-k gatedielectric layer 116 and disposed over a logic gate dielectric 132. Insome embodiments, a conformal contact etch stop layer 108 and aninter-layer dielectric layer 110 are disposed between the memory region102 and the logic region 104 for isolation. Additional contact etch stoplayers and inter-layer dielectric layers can be disposed over theinter-layer dielectric layer 110. Contacts can be disposed through theinter-layer dielectric layers to reach source/drain regions 126, thecontrol gate electrodes 122, the select gate electrodes 120, and thefirst metal gate electrode 114. In some embodiments, the contacts maycomprise tungsten (W), for example.

FIGS. 4-15 illustrate a series of cross-sectional views 400-1500 of someembodiments of a method for manufacturing an IC comprising a HKMG NVMdevice.

As shown in cross-sectional view 400 of FIG. 4, a substrate 106 isprovided including a memory region 102 and an adjacent logic region 104.A protection layer 402 is formed within the logic region 104 over thesubstrate 106. In some embodiments, the protection layer 402 is formedby depositing the protection layer over the substrate 106 followed bypatterning the protection layer to form an opening within the memoryregion 102. A mask layer 404 (e.g. a photoresist mask) can be formed toprotect the protection layer within the logic region 104 during thepatterning. In some embodiments, the protection layer 402 is formed tohave an upper surface aligned with an upper surface of an isolationstructure 406 between the memory region 102 and the logic region 104, asa result of a planarization process. In some embodiments, the isolationstructure 406 comprises a deep trench disposed within the substrate 106and filled with a dielectric material. In various embodiments, thesubstrate 106 may comprise any type of semiconductor body (e.g., siliconbulk, SiGe, SOI, etc.) such as a semiconductor wafer or one or more dieon a wafer, as well as any other type of semiconductor and/or epitaxiallayers formed thereon and/or otherwise associated therewith.

As shown in cross-sectional view 500 of FIG. 5, a memory gate dielectriclayer 502 and a floating gate layer 504 are formed over the substrate106 within the memory region 102. In some embodiments, the memory gatedielectric layer 502 comprises silicon dioxide and the floating gatelayer 504 comprises doped polysilicon. In some embodiments, the memorygate dielectric layer 502 and the floating gate layer 504 are alsoformed over the protection layer 402 within the logic region 104 andthen removed by a planarization process, such as a chemical-mechanicalpolishing (CMP) process. The protection layer 402 may be then removed toexpose an upper surface of the substrate 106 within the logic region104. In some embodiments, the memory gate dielectric layer 502 and thefloating gate layer 504 are formed by using a deposition technique(e.g., PVD, CVD, PE-CVD, ALD, etc.).

As shown in cross-sectional view 600 of FIG. 6, an inter-poly dielectriclayer 602, a control gate layer 604 and a hard mask layer 606 aresubsequently formed over the floating gate layer 504 within the memoryregion 102 and over the substrate 106 within the logic region 104. Insome embodiments, the inter-poly dielectric layer 602, the control gatelayer 604, and the hard mask layer 606 are formed by using a depositiontechnique (e.g., PVD, CVD, PE-CVD, ALD, etc.).

As shown in cross-sectional view 700 of FIG. 7, the hard mask layer 606and the control gate layer 604 (shown in FIG. 6) are patterned to form asacrificial logic gate stack 702 within the logic region 104 and acontrol gate stack 704 within the memory region 102. The sacrificiallogic gate stack 702 may comprise a sacrificial select gate layer 706,which is a portion of the control gate layer 604 of FIG. 6 and theoverlying hard mask layer 606. The control gate stack 704 may comprise acontrol gate electrode 122, which is a portion of the control gate layer604 of FIG. 6, formed under the hard mask layer 606 and on theinter-poly dielectric layer 602. In some embodiments, the sacrificiallogic gate stack 702 and the control gate stack 704 are formed byperforming a photolithography process followed by one or more subsequentetching processes. In various embodiments, the etching processes maycomprise a wet etch or a dry etch (e.g., a plasma etch withtetrafluoromethane (CF₄), sulfur hexafluoride (SF₆), nitrogentrifluoride (NF₃), etc.). The etching processes may stop on theinter-poly dielectric layer 602 within the memory region 102, and maystop on the inter-poly dielectric layer 602 within the logic region 104.In some embodiments, a control gate spacer 140 is subsequently formedalong sidewalls of the sacrificial logic gate stack 702 and the controlgate stack 704. In some embodiments, the control gate spacer 140 isformed by depositing a conformal dielectric layer followed by an etchprocess, to remove a lateral portion of the dielectric layer and toleave a vertical portion along the sidewalls of the sacrificial logicgate stack 702 and the control gate stack 704.

As shown in cross-sectional view 800 of FIG. 8, the inter-polydielectric layer 602 and the floating gate layer 504 within the memoryregion 102 are patterned to form a memory gate stack 802 together withthe control gate stack 704 (shown in FIG. 7). In some embodiments, theinter-poly dielectric layer 602 and the floating gate layer 504 arepatterned self-aligned, i.e., according to the control gate stack 704and the control gate spacer 140 as a “mask layer”. In variousembodiments, the etching processes may comprise a wet etch and/or a dryetch (e.g., a plasma etch with tetrafluoromethane (CF₄), sulfurhexafluoride (SF₆), nitrogen trifluoride (NF₃), etc.). The etchingprocesses may stop on the memory gate dielectric layer 502. In someembodiments, a floating gate spacer 128 is subsequently formed alongsidewalls of the sacrificial logic gate stack 702 and the memory gatestack 802. In some embodiments, the floating gate spacer 128 maycomprise one or more layers of oxide or nitride.

As shown in cross-sectional view 900 of FIG. 9, a common source/drainregion 150 is formed between opposing sides of the memory gate stacks802 within the substrate 106. A portion of the floating gate spacer 128between the opposing sides of the memory gate stacks 802 is removed witha mask 902 (e.g., a photoresist mask) in place, and a tunnelingdielectric layer 154 is formed along the opposing sides of the floatinggates 124. In some embodiments, the tunneling dielectric layer 154 isformed by thermal oxidation, wherein an oxidizing agent is forced todiffuse into the floating gates 124. A common source/drain dielectric148 can be formed on the common source/drain region 150.

As shown in cross-sectional view 1000 of FIG. 10, the memory gatedielectric layer 502 is patterned to form a floating gate dielectric 138with a mask 1004 (e.g., a photoresist mask) in place. A select gatedielectric layer 1002 is formed on the substrate 106 aside of thefloating gate dielectric 138. In some embodiments, the select gatedielectric layer 1002 is formed to have a thickness smaller than that ofthe floating gate dielectric 138.

As shown in cross-sectional view 1100 of FIG. 11, a conductive layer1102 is formed along sides of the memory gate stacks 802 and thesacrificial logic gate stacks 702. In some embodiments, the conductivelayer 1102 is formed by depositing the conductive layer conformally overthe workpiece before performing an etch process, to remove a lateralportion of the conductive layer and to leave a vertical portion alongthe sidewalls of memory gate stacks 802 and the sacrificial logic gatestacks 702. Then the conductive layer 1102 within the logic region 104is selectively removed with a mask 1104 (e.g., a photoresist mask) inplace. Portions of the control gate spacer 140 and the floating gatespacer 128 within the logic region 104 may be also removed.

As shown in cross-sectional view 1200 of FIG. 12, a sidewall spacer 130is formed along the conductive layer 1102 within the memory region 102and along the sacrificial logic gate stacks 702 within the logic region104. In some embodiments, the sidewall spacer 130 is formed bydepositing a conformal dielectric layer followed by an etch process, toremove a lateral portion of the dielectric layer and to leave a verticalportion along sidewalls of the conductive layer 1102 and the sacrificiallogic gate stacks 702. In some embodiments, the sidewall spacer 130 maycomprise an oxide (e.g., SiO₂) or a nitride (e.g., SiN) formed by adeposition process. The sidewall spacer 130 may be formed directly on anupper surface of the substrate 106. Source/drain regions 126 cansubsequently formed within the memory region 102 and within the logicregion 104, respectively. In some embodiments, the source/drain regions126 may be formed by an implantation process that selectively implantsthe substrate 106 with a dopant, such as boron (B) or phosphorous (P),for example. In some other embodiments, the source/drain regions 126 maybe formed by performing an etch process to form a trench followed by anepitaxial growth process. In such embodiments, the source/drain regions126 may have a raised portion that is higher than the upper surface ofthe substrate 106. In some embodiments, a salicidation process isperformed to form a silicide layer (not shown in the figure) on uppersurfaces of the source/drain regions 126. In some embodiments, thesalicidation process may be performed by depositing a nickel layer andthen performing a thermal annealing process (e.g., a rapid thermalanneal).

As shown in cross-sectional view 1300 of FIG. 13, a conformal contactetch stop layer 108 is formed over the source/drain regions 126 andextends along the sidewall spacer 130. In some embodiments, the contactetch stop layer 108 may comprise silicon nitride formed by way of adeposition process (e.g., CVD, PVD, etc.). A first inter-layerdielectric layer 110 is then formed over the contact etch stop layer 108followed by performing a first planarization process. In someembodiments, the first planarization process may comprise a chemicalmechanical polishing (CMP) process. In some embodiments, the firstinter-layer dielectric layer 110 may comprise a low-k dielectric layer,formed by way of a deposition process (e.g., CVD, PVD, etc.). Thesacrificial select gate layer 706 may be exposed after the firstplanarization process. An erase gate electrode 152 can be formed betweenopposing sides of control gate electrodes 122 and select gate electrodes120 can be formed at opposite sides of the control gate electrodes 122.The erase gate electrode 152 and the select gate electrodes 120 can bemade from the conductive layer 1102 shown in FIG. 12.

As shown in cross-sectional view 1400 of FIG. 14, a hard mask 1402 isformed to cover the memory region 102 and to expose sacrificial logicgate stacks within the logic region 104. The sacrificial select gatelayer 706 (shown in FIG. 13) is removed, resulting in the formation oftrenches 1404 between the sidewall spacer 130.

As shown in cross-sectional view 1500 of FIG. 15, a high-k gatedielectric layer 116, a barrier layer 144 and metal gate materials (e.g.146, 156) are formed over the first inter-layer dielectric layer 110and/or the hard mask 1402 and filled into the trenches 1404 of FIG. 14through one or more deposition processes (e.g., chemical vapordeposition, physical vapor deposition, etc.). The barrier layer 144 canbe formed in conformal and comprise metal materials such as titanium(Ti), tantalum (Ta), zirconium (Zr), or their alloys, for example. Aseries of deposition and etching processes can be performed that formdifferent metal compositions within the trenches 1404 for differentdevices or different components of the same devices, to achieve desiredwork functions. In some embodiments, the memory gate dielectric layer502 within the sacrificial logic gate stacks (shown in FIG. 13) can beremoved and replaced by a logic gate dielectric 132. Contacts can beformed within a second inter-layer dielectric layer overlying the firstinter-layer dielectric layer 110. The contacts may be formed byselectively etching the second inter-layer dielectric layer to formopenings (e.g. with a patterned photoresist mask in place), and bysubsequently depositing a conductive material within the openings. Insome embodiments, the conductive material may comprise tungsten (W) ortitanium nitride (TiN), for example.

FIG. 16 illustrates a flow diagram of some embodiments of a method 1600for manufacturing an IC comprising a HKMG NVM device.

Although method 1600 is described in relation to FIGS. 4-15, it will beappreciated that the method 1600 is not limited to such structures, butinstead may stand alone as a method independent of the structures.Furthermore, while the disclosed methods (e.g., method 1600) areillustrated and described herein as a series of acts or events, it willbe appreciated that the illustrated ordering of such acts or events arenot to be interpreted in a limiting sense. For example, some acts mayoccur in different orders and/or concurrently with other acts or eventsapart from those illustrated and/or described herein. In addition, notall illustrated acts may be required to implement one or more aspects orembodiments of the description herein. Further, one or more of the actsdepicted herein may be carried out in one or more separate acts and/orphases.

At 1602, a memory gate dielectric layer and a floating gate layer areformed over a substrate within a memory region. A protective layer isformed within a logic region before forming the memory gate dielectriclayer and the floating gate layer, such that an upper surface of thesubstrate within the logic region can be protected when patterning thememory gate dielectric layer and the floating gate layer. FIGS. 4-5illustrate some embodiments of cross-sectional views 400, 500corresponding to act 1602.

At 1604, an inter-poly dielectric layer and a control gate layer areformed within both the memory region and the logic region. FIG. 6illustrates some embodiments of a cross-sectional view 600 correspondingto act 1604.

At 1606, the control gate layer is subsequently patterned to form asacrificial logic gate electrode within the logic region and a controlgate electrode within the memory region. A control gate spacer is formedalong the sacrificial logic gate and the control gate. FIG. 7illustrates some embodiments of a cross-sectional view 700 correspondingto act 1606.

At 1608, the inter-poly dielectric layer and the floating gate layerwithin the memory region are patterned to form a memory gate stacktogether with the control gate electrodes. FIG. 8 illustrates someembodiments of a cross-sectional view 800 corresponding to act 1608.

At 1610, select gate electrodes and an erase gate electrode are formedalongside the memory gate stack. In some embodiments, a commonsource/drain region is formed between opposing sides of the memory gatestacks within the substrate. A common source/drain dielectric and atunneling dielectric layer are formed on the common source/drain regionalong the opposing sides of the floating gates. A select gatedielectric, select gates and a select gate spacer are subsequentlyformed at opposite sides of the memory gate stacks. Further, a contactetch stop layer is formed over the substrate, a first inter-leveldielectric layer is formed over the contact etch stop layer, and a firstplanarization is performed. The sacrificial logic gate electrode withinthe logic region is exposed. FIGS. 9-13 illustrate some embodiments ofcross-sectional views corresponding to act 1610.

At 1612, the sacrificial logic gate electrode is removed and trenchesare formed between the select gate spacer within the logic region. FIG.14 illustrates some embodiments of a cross-sectional view 1400corresponding to act 1612.

At 1614, a replacement gate process is subsequently performed by forminga high-k gate dielectric layer and metal materials within the trenches.In some embodiments, the memory gate dielectric layer within thetrenches can be removed and replaced by a logic gate dielectric. FIG. 15illustrates some embodiments of a cross-sectional view 1500corresponding to act 1614.

FIGS. 17-25 illustrate a series of cross-sectional views 1700-2500 ofsome embodiments of a method for manufacturing an IC comprising a HKMGNVM device.

As shown in cross-sectional view 1700 of FIG. 17, a substrate 106 isprovided including a memory region 102 and an adjacent logic region 104.A memory gate dielectric 204 is formed over the substrate 106. A selectgate layer 1706 and a hard mask layer 1708 are formed and patterned overthe memory gate dielectric 204 to form a pair of select gate stacks 1704within the memory region 102 and a sacrificial logic gate stack 1702within the logic region 104. The memory gate dielectric layer 204 can bean oxide, such as silicon dioxide, or other high-k dielectric materials.In some embodiments, the select gate layer 1706 and the hard mask layer1708 are formed by using a deposition technique (e.g., PVD, CVD, PE-CVD,ALD, etc.), and patterned by performing a photolithography processfollowed by one or more subsequent etching processes. In variousembodiments, the etching processes may comprise a wet etch or a dry etch(e.g., a plasma etch with tetrafluoromethane (CF₄), sulfur hexafluoride(SF₆), nitrogen trifluoride (NF₃), etc.).

As shown in cross-sectional view 1800 of FIG. 18, a conformal chargetrapping layer 202 is formed on the upper surface of the hard mask layer1708, along hard mask sidewalls and select gate sidewalls, and over theupper surface of the substrate 106. In some embodiments, the conformalcharge trapping layer 202 can be formed by plasma enhanced chemicalvapor deposition (PECVD), and can be made up of multiple layers, such asa charge trapping component sandwiched between two dielectric layers. Insome embodiments, the charge trapping layer 202 comprises a first oxidelayer, a nitride layer, and a second oxide layer or, which can bereferred to as an oxide-nitride-oxide (ONO) structure. In some otherembodiments, the charge trapping layer 202 comprises a first oxidelayer, a layer of silicon dots, and a second oxide layer. A control gatelayer 1802 is then formed over the conformal charge trapping layer 202.In some embodiments, the control gate layer 1802 comprises a conductivematerial, for example, polysilicon or metal. In some embodiments, anantireflective layer 1804 is then formed over the control gate layer1802 to fill gaps and formed a planar upper surface. The antireflectivelayer 1804 can be one or multiple layers of inorganic or organic films,formed by either a deposition or a spin-on process followed by aplanarization process.

As shown in cross-sectional view 1900 of FIG. 19, the control gate layer1802 and the antireflective layer 1804 are etched back to remove anupper portion of the control gate layer 1802 and to form a planar uppersurface of the control gate layer 1802 locates at the substantially samelateral plane of a top surface of the select gate layer 1706. In someembodiments, an upper sidewall of the conformal charge trapping layer202 is exposed. In some embodiments, an upper portion of the chargetrapping component may be removed as well during the etching backprocess.

As shown in cross-sectional view 2000 of FIG. 20, a pair of cap spacers2002 is formed over the remaining portions of the control gate layer1802 along an upper sidewall of the conformal charge trapping layer 202.In some embodiments, a conformal dielectric layer, shown by broken line,is firstly formed along the topology and then etched to a top surface ofthe control gate layer 1802, forming the pair of cap spacers 2002. Insome embodiments, a dielectric liner (not shown) can be formed from thetop surface of the control gate layer 1802 extending to the uppersidewall of the charge trapping layer 202 and cover upper surfaces ofthe hard mask layer 1708 before forming the pair of cap spacers 2002.The dielectric liner can act as an etch stop layer with relative highselectivity and enhance adhesion of the cap spacers 2002. As an example,the dielectric layer can be made of silicon nitride and the dielectricliner can be made of silicon oxide.

As shown in cross-sectional view 2100 of FIG. 21, a portion of thecontrol gate layer 1802 not covered by the pairs of cap spacers 2002 isremoved to form a pair of control gate electrodes 122 corresponding to aremaining portion of the control gate layer 1802. In some embodiments,the control gate layer 1802 is patterned self-aligned, i.e., accordingto the cap spacers 2002 as a “mask layer”. In various embodiments, theetching processes may comprise a wet etch and/or a dry etch (e.g., aplasma etch with tetrafluoromethane (CF₄), sulfur hexafluoride (SF₆),nitrogen trifluoride (NF₃). Outer sidewalls of the control gateelectrodes 122 and the pair of cap spacers 2002 are aligned.

As shown in cross-sectional view 2200 of FIG. 22, a portion of thecontrol gate layer 1802 and a portion of the charge trapping layer 202located at inner sides of the pair of select gates are selectivelyremoved with a mask 2202 (e.g., a photoresist mask) in place. Portionsof the control gate layer 1802 and the charge trapping layer 202 withinthe logic region 104 are also removed. In some embodiments, the removedportions are etched off using wet etching in order to protect thesubstrate 106 from damaging. In some embodiments, source/drain regions126 are formed subsequently in the substrate 106. The source/drainregions 126 are arranged between inner sidewalls of the pair of theselect gate electrodes 120 and about outer sidewalls of the pair of thecontrol gate electrodes 122. A sidewall spacer 130 is formed along thecontrol gate electrodes 122 and the select gate electrodes 120 withinthe memory region 102 and along the sacrificial logic gate stacks 1702within the logic region 104. In some embodiments, the sidewall spacer130 may comprise an oxide (e.g., SiO₂) or a nitride (e.g., SiN) formedby a deposition process. The sidewall spacer 130 may be formed directlyon an upper surface of the substrate 106.

As shown in cross-sectional view 2300 of FIG. 23, a conformal contactetch stop layer 108 is formed over the source/drain regions 126 andextends along the sidewall spacer 130. In some embodiments, the contactetch stop layer 108 may comprise silicon nitride formed by way of adeposition process (e.g., CVD, PVD, etc.). A first inter-layerdielectric layer 110 is then formed over the contact etch stop layer 108followed by performing a first planarization process. The sacrificialselect gate layer 1706 may be exposed after the first planarizationprocess.

As shown in cross-sectional view 2400 of FIG. 24, a hard mask 2402 isformed to cover the memory region 102 and to expose the sacrificialselect gate layer 1706 within the logic region 104. The sacrificialselect gate layer 1706 (shown in FIG. 23) is then removed, resulting inthe formation of trenches 2404 between the sidewall spacer 130.

As shown in cross-sectional view 2500 of FIG. 25, a high-k gatedielectric layer 116, a barrier layer 144 and metal gate materials (e.g.146, 156) are formed over the first inter-layer dielectric layer 110and/or the hard mask 2402 and filled into the trenches 2404 of FIG. 24through a series of deposition processes (e.g., chemical vapordeposition, physical vapor deposition, etc.). The barrier layer 144 canbe formed in conformal and comprise metal materials such as titanium(Ti), tantalum (Ta), zirconium (Zr), or their alloys, for example. Aseries of deposition and etching processes can be performed that formdifferent metal compositions within the trenches 2404 for differentdevices or different components of the same devices, to achieve desiredwork functions. In some embodiments, the memory gate dielectric layer204 within the sacrificial logic gate stacks (shown in FIG. 23) can beremoved and replaced by a logic gate dielectric 132. Still shown in FIG.25, a second inter-layer dielectric layer 2502 can be formed overlyingthe first inter-layer dielectric layer 110. Contacts 2504 can be formedthrough the second inter-layer dielectric layer and the firstinter-layer dielectric layer 110. The contacts may be formed byselectively etching the second inter-layer dielectric layer to formopenings (e.g. with a patterned photoresist mask in place), and bysubsequently depositing a conductive material within the openings. Insome embodiments, the conductive material may comprise tungsten (W) ortitanium nitride (TiN), for example.

FIG. 26 illustrates a flow diagram of some embodiments of a method 2600for manufacturing an IC comprising a HKMG NVM device.

Although method 2600 is described in relation to FIGS. 17-25, it will beappreciated that the method 2600 is not limited to such structures, butinstead may stand alone as a method independent of the structures.Furthermore, while the disclosed methods (e.g., method 2600) areillustrated and described herein as a series of acts or events, it willbe appreciated that the illustrated ordering of such acts or events arenot to be interpreted in a limiting sense. For example, some acts mayoccur in different orders and/or concurrently with other acts or eventsapart from those illustrated and/or described herein. In addition, notall illustrated acts may be required to implement one or more aspects orembodiments of the description herein. Further, one or more of the actsdepicted herein may be carried out in one or more separate acts and/orphases.

At 2602, select gate stacks are formed within a memory region and logicgate stacks are formed within an adjacent logic region over a substrate.Each of the select gate stacks may include a select gate electrode and ahard mask. Each of the logic gate stacks may include a sacrificial logicgate electrode and a hard mask. FIG. 17 illustrates some embodiments ofa cross-sectional view 1700 corresponding to act 2602.

At 2604, a conformal charge trapping layer and a control gate layer areformed over the substrate, extending along sidewalls and crossing overupper surfaces of the logic gate stacks and the select gate stacks. FIG.18 illustrates some embodiments of a cross-sectional view 1800corresponding to act 2604.

At 2606, the control gate layer is etched back, and a planar uppersurface is formed. FIG. 19 illustrates some embodiments of across-sectional view 1900 corresponding to act 2606.

At 2608, a cap spacer is formed over the control gate layer along anupper sidewall of the charge trapping layer. FIG. 20 illustrates someembodiments of a cross-sectional view 2000 corresponding to act 2608.

At 2610, the control gate layer is patterned according to the cap spacerto form control gate electrodes. FIG. 21 illustrates some embodiments ofa cross-sectional view 2100 corresponding to act 2610.

At 2612, excessive portions of the control gate layer and the chargetrapping layer between inner sides of a pair of select gate stacks areremoved together with portions within the logic region. FIG. 22illustrates some embodiments of a cross-sectional view 2200corresponding to act 2612.

At 2614, an etch stop layer and an inter-layer dielectric layer areformed between the memory region and the logic region. A planarizationis performed, and the sacrificial logic gate electrode within the logicregion is exposed. FIG. 23 illustrates some embodiments of across-sectional view 2300 corresponding to act 2614.

At 2616, the sacrificial logic gate electrode is removed, and a trenchis formed within the logic region. FIG. 24 illustrates some embodimentsof a cross-sectional view 2400 corresponding to act 2616.

At 2618, a replacement gate process is subsequently performed by forminga high-k gate dielectric layer and metal materials within the trenches.In some embodiments, the memory gate dielectric layer within thetrenches can be removed and replaced by a logic gate dielectric. FIG. 25illustrates some embodiments of a cross-sectional view 2500corresponding to act 2618.

FIGS. 27-36 illustrate a series of cross-sectional views 2700-3600 ofsome embodiments of a method for manufacturing an IC comprising a HKMGNVM device.

As shown in cross-sectional view 2700 of FIG. 27, a substrate 106 isprovided including a memory region 102 and an adjacent logic region 104.A memory gate dielectric 204 is formed over the substrate 106. A selectgate layer 1706 and a hard mask layer 1708 are formed and patterned overthe memory gate dielectric 204 to form a pair of select gate stacks 1704within the memory region 102 and a sacrificial logic gate stack 1702within the logic region 104. The memory gate dielectric layer 204 can bean oxide, such as silicon dioxide, or other high-k dielectric materials.In some embodiments, the select gate layer 1706 and the hard mask layer1708 are formed by using a deposition technique (e.g., PVD, CVD, PE-CVD,ALD, etc.), and patterned by performing a photolithography processfollowed by one or more subsequent etching processes. In variousembodiments, the etching processes may comprise a wet etch or a dry etch(e.g., a plasma etch with tetrafluoromethane (CF₄), sulfur hexafluoride(SF₆), nitrogen trifluoride (NF₃), etc.).

As shown in cross-sectional view 2800 of FIG. 28, a conformal chargetrapping layer 202 is formed on the upper surface of the hard mask layer1708, along the hard mask sidewalls, along select gate sidewalls, andover the upper surface of the substrate 106. In some embodiments, theconformal charge trapping layer 202 can be formed by plasma enhancedchemical vapor deposition (PECVD), and can be made up of multiplelayers, such as a charge trapping component sandwiched between twodielectric layers. In some embodiments, the charge trapping layer 202comprises a first oxide layer, a nitride layer, and a second oxide layeror, which can be referred to as an oxide-nitride-oxide (ONO) structure.In some other embodiments, the charge trapping layer 202 comprises afirst oxide layer, a layer of silicon dots, and a second oxide layer. Acontrol gate layer 1802 and a cap spacer layer 2802 are then formed overthe conformal charge trapping layer 202. In some embodiments, thecontrol gate layer 1802 comprises a conductive material, for example,doped silicon or metal. The cap spacer layer 2802 comprises a dielectriclayer, for example, silicon nitride. In some embodiments, the controlgate layer 1802 and the cap spacer layer 2802 are formed by way of adeposition process (e.g., CVD, PVD, etc.).

As shown in cross-sectional view 2900 of FIG. 29, the cap spacer layer2802 is etched to form a pair of cap spacers 302 over a lower lateralportion of the control gate layer 1802 along a sidewall of the controlgate layer 1802.

As shown in cross-sectional view 3000 of FIG. 30, the control gate layer1802 is etched back with the pairs of cap spacers 302 in place to form apair of control gate electrodes 122 corresponding to a remaining portionof the control gate layer 1802. In some embodiments, the control gatelayer 1802 is patterned self-aligned, i.e., according to the cap spacers302 as a “mask layer”. In various embodiments, the etching processes maycomprise a wet etch and/or a dry etch (e.g., a plasma etch withtetrafluoromethane (CF₄), sulfur hexafluoride (SF₆), nitrogentrifluoride (NF₃). Lower sidewalls of the control gate electrodes 122and the pair of cap spacers 302 are aligned.

As shown in cross-sectional view 3100 of FIG. 31, a portion of thecontrol gate layer 1802 (shown in FIG. 30) and a portion of the chargetrapping layer 202 located at inner sides of the pair of select gatestacks are selectively removed with a mask 3102 (e.g., a photoresistmask) in place. Portions of the control gate layer 1802 and the chargetrapping layer 202 within the logic region 104 are also removed. In someembodiments, the removed portions are etched off using wet etching ordry etching processes.

As shown in cross-sectional view 3200 of FIG. 32, a sidewall spacer 130is formed along the control gate electrodes 122 and the select gatestacks 1704 within the memory region 102 and along the sacrificial logicgate stacks 1702 within the logic region 104. In some embodiments, thesidewall spacer 130 may comprise an oxide (e.g., SiO₂) or a nitride(e.g., SiN) formed by a deposition process. Source/drain regions 126 areformed alongside the sidewall spacer 130 within the substrate 106. Thesource/drain regions 126 are arranged between inner sidewalls of thepair of the select gate electrodes 120 and about outer sidewalls of thepair of the control gate electrodes 122.

As shown in cross-sectional view 3300 of FIG. 33, a conformal contactetch stop layer 108 is formed over the source/drain regions 126 andextends along the sidewall spacer 130. In some embodiments, the contactetch stop layer 108 may comprise silicon nitride formed by way of adeposition process (e.g., CVD, PVD, etc.). A first inter-layerdielectric layer 110 is then formed over the contact etch stop layer 108followed by performing a first planarization process. The sacrificialselect gate layer 1706 may be exposed after the first planarizationprocess.

As shown in cross-sectional view 3400 of FIG. 34, a hard mask 2402 isformed to cover the memory region 102 and to expose the sacrificialselect gate layer 1706 within the logic region 104. The sacrificialselect gate layer 1706 (shown in FIG. 33) is then removed, resulting inthe formation of trenches 2404 between the sidewall spacer 130.

As shown in cross-sectional view 3500 of FIG. 35, a high-k gatedielectric layer 116, a barrier layer 144 and metal gate materials (e.g.146, 156) are formed over the first inter-layer dielectric layer 110and/or the hard mask 2402 and filled into the trenches 2404 of FIG. 24through a series of deposition processes (e.g., chemical vapordeposition, physical vapor deposition, etc.). The barrier layer 144 canbe formed in conformal and comprise metal materials such as titanium(Ti), tantalum (Ta), zirconium (Zr), or their alloys, for example. Aseries of deposition and etching processes can be performed that formdifferent metal compositions within the trenches 2404 for differentdevices or different components of the same devices, to achieve desiredwork functions. In some embodiments, the memory gate dielectric layer204 within the sacrificial logic gate stacks (shown in FIG. 33) can beremoved and replaced by a logic gate dielectric 132.

As shown in cross-sectional view 3600 of FIG. 36, a second inter-layerdielectric layer 2502 can be formed overlying the first inter-layerdielectric layer 110. Contacts 2504 can be formed through the secondinter-layer dielectric layer and the first inter-layer dielectric layer110 to reach on logic transistors 112 a, 112 b within the logic region104, the select gate electrodes 120 and the control gate electrodes 122within the memory region 102, and the source/drain regions 126. Thecontacts 2504 may be formed by selectively etching the secondinter-layer dielectric layer to form openings (e.g. with a patternedphotoresist mask in place), and by subsequently depositing a conductivematerial within the openings. In some embodiments, the conductivematerial may comprise tungsten (W) or titanium nitride (TiN), forexample.

FIG. 37 illustrates a flow diagram of some embodiments of a method 3700for manufacturing an IC comprising a HKMG NVM device.

Although method 3700 is described in relation to FIGS. 27-36, it will beappreciated that the method 3700 is not limited to such structures, butinstead may stand alone as a method independent of the structures.Furthermore, while the disclosed methods (e.g., method 3700) areillustrated and described herein as a series of acts or events, it willbe appreciated that the illustrated ordering of such acts or events arenot to be interpreted in a limiting sense. For example, some acts mayoccur in different orders and/or concurrently with other acts or eventsapart from those illustrated and/or described herein. In addition, notall illustrated acts may be required to implement one or more aspects orembodiments of the description herein. Further, one or more of the actsdepicted herein may be carried out in one or more separate acts and/orphases.

At 3702, select gate stacks are formed within a memory region and logicgate stacks are formed within an adjacent logic region over a substrate.Each of the select gate stacks may include a select gate electrode and ahard mask. Each of the logic gate stacks may include a sacrificial logicgate electrode and a hard mask. FIG. 27 illustrates some embodiments ofa cross-sectional view 2700 corresponding to act 3702.

At 3704, a conformal charge trapping layer, a control gate layer, and acap spacer layer are formed over the substrate, extending alongsidewalls and crossing over upper surfaces of the logic gate stacks andthe select gate stacks. FIG. 28 illustrates some embodiments of across-sectional view 2800 corresponding to act 3704.

At 3706, the cap spacer layer is etched back, and a cap spacer is formedover the control gate layer along an upper sidewall of the control gatelayer. FIG. 29 illustrates some embodiments of a cross-sectional view2900 corresponding to act 3706.

At 3708, the control gate layer is patterned according to the capspacer, to form control gate electrodes. FIG. 30 illustrates someembodiments of a cross-sectional view 3000 corresponding to act 3708.

At 3710, excessive portions of the control gate layer between innersides of the pair of select gate stacks are removed together withportions within the logic region. FIG. 31 illustrates some embodimentsof a cross-sectional view 3100 corresponding to act 3710.

At 3712, excessive portions of the charge trapping layer between innersides of the pair of select gate stacks are removed together withportions within the logic region. A sidewall spacer is formed along thecontrol gate electrodes and the select gate stacks within the memoryregion and along the sacrificial logic gate stacks within the logicregion. FIG. 32 illustrates some embodiments of a cross-sectional view3200 corresponding to act 3712.

At 3714, an etch stop layer and an inter-layer dielectric layer areformed between the memory region and the logic region. A planarizationis performed, and the sacrificial logic gate electrode within the logicregion is exposed. FIG. 33 illustrates some embodiments of across-sectional view 3300 corresponding to act 3714.

At 3716, the sacrificial logic gate electrode is removed, and a trenchis formed within the logic region. FIG. 34 illustrates some embodimentsof a cross-sectional view 3400 corresponding to act 3716.

At 3718, a replacement gate process is subsequently performed by forminga high-k gate dielectric layer and metal materials within the trenches.In some embodiments, the memory gate dielectric layer within thetrenches can be removed and replaced by a logic gate dielectric. FIG. 35illustrates some embodiments of a cross-sectional view 3500corresponding to act 3718.

At 3720, a second planarization is performed and metal gate electrodesare formed within the logic region. A second inter-level dielectriclayer and contacts are formed over the first inter-level dielectriclayer. FIG. 36 illustrates some embodiments of a cross-sectional view3600 corresponding to act 3720.

Therefore, the present disclosure relates to an integrated circuit (IC)that comprises a high-k metal gate (HKMG) non-volatile memory (NVM)device and that provides small scale and high performance, and a methodof formation.

In some embodiments, the present disclosure relates to an integratedcircuit. The integrated circuit comprises a memory region and a logicregion disposed adjacent to the memory region. The memory regioncomprises a non-volatile memory (NVM) device having a control gateelectrode and a select gate electrode disposed between two neighboringsource/drain regions over a substrate. The control gate electrode andthe select gate electrode comprise polysilicon. The logic regioncomprises a logic device including a metal gate electrode disposedbetween two neighboring source/drain regions over a logic gatedielectric and having bottom and sidewall surfaces covered by a high-kgate dielectric layer.

In other embodiments, the present disclosure relates to an integratedcircuit. The integrated circuit comprises a substrate including a logicregion and a memory region adjacent to the logic region. The integratedcircuit further comprises a memory gate dielectric layer disposed overthe substrate across the logic region and the memory region and a logicdevice in the logic region comprising a logic gate electrode over thememory gate dielectric layer. The integrated circuit further comprises anon-volatile memory (NVM) device in the memory region comprising aselect gate electrode over the memory gate dielectric layer.

In yet other embodiments, the present disclosure relates to anintegrated circuit. The integrated circuit comprises a memory regioncomprising a non-volatile memory (NVM) device having a control gateelectrode and a select gate electrode disposed between two neighboringsource/drain regions over a substrate. The control gate electrode andthe select gate electrode comprise polysilicon. The integrated circuitfurther comprises a logic region disposed adjacent to the memory regionand comprising a logic device including a metal gate electrode disposedbetween two neighboring source/drain regions over a logic gatedielectric and having bottom and sidewall surfaces covered by a high-kgate dielectric layer. The logic gate dielectric has a top surfacedisposed below a bottom surface of the metal gate electrode andseparated therefrom by the high-k gate dielectric layer. The integratedcircuit further comprises a sidewall spacer disposed on an upper surfaceof the substrate, having a first portion along outer sidewalls of thecontrol gate electrode and the select gate electrode, and a secondportion along sidewalls of the metal gate electrode. The integratedcircuit further comprises a contact etch stop layer disposed between thelogic region and the memory region with a ‘U’ shaped structure. The ‘U’shaped structure has a first vertical component abutting the firstportion of the sidewall spacer, a second vertical component abutting thesecond portion of the sidewall spacer, and a planar lateral componentconnecting the first vertical component and the second verticalcomponent.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit (IC), comprising: a memoryregion comprising a non-volatile memory (NVM) device having a controlgate electrode and a select gate electrode disposed between twoneighboring source/drain regions over a substrate, the control gateelectrode and the select gate electrode comprising polysilicon; a logicregion disposed adjacent to the memory region and comprising a logicdevice including a metal gate electrode disposed between two neighboringsource/drain regions over a logic gate dielectric and having bottom andsidewall surfaces covered by a high-k gate dielectric layer; and amemory gate dielectric seamlessly disposed under both the control gateelectrode and the select gate electrode; wherein the memory gatedielectric has a constant lateral thickness over the entire top surface.2. The IC of claim 1, wherein the memory gate dielectric has a planartop surface extending from a first position under the control gateelectrode to a second position under the select gate electrode.
 3. TheIC of claim 2, wherein sidewalls of the memory gate dielectric arealigned with opposite sidewalls of the control gate electrode and theselect gate electrode.
 4. The IC of claim 2, further comprising: acharge trapping layer separating opposing sidewalls of the control gateelectrode and the select gate electrode, wherein the charge trappinglayer is disposed between the control gate electrode and the memory gatedielectric to cover a bottom surface of the control gate electrode. 5.The IC of claim 4, wherein the charge trapping layer comprises anoxide-nitride-oxide (ONO) structure.
 6. The IC of claim 1, wherein thecontrol gate electrode and the select gate electrode have planar topsurfaces aligned with a top surface of the metal gate electrode.
 7. TheIC of claim 1, wherein the select gate electrode has a cuboid shape witha planar upper surface aligned with an upper surface of the metal gateelectrode; and wherein the control gate electrode has an I′ shape with acap spacer disposed along a ledge portion of the control gate electrodeand located at one side of the control gate electrode opposite to theother side where the select gate electrode is located.
 8. The IC ofclaim 1, further comprising: a sidewall spacer disposed on an uppersurface of the substrate, having a first portion along outer sidewallsof the control gate electrode and the select gate electrode, and asecond portion along sidewalls of the metal gate electrode; and acontact etch stop layer disposed between the logic region and the memoryregion with a ‘U’ shaped structure; wherein the ‘U’ shaped structure hasa first vertical component abutting the first portion of the sidewallspacer, a second vertical component abutting the second portion of thesidewall spacer, and a planar lateral component connecting the firstvertical component and the second vertical component.
 9. An integratedcircuit (IC), comprising: a memory region comprising a non-volatilememory (NVM) device having a control gate electrode and a select gateelectrode disposed between two neighboring source/drain regions over asubstrate, the control gate electrode and the select gate electrodecomprising polysilicon; a logic region disposed adjacent to the memoryregion and comprising a logic device including a metal gate electrodedisposed between two neighboring source/drain regions over a logic gatedielectric and having bottom and sidewall surfaces covered by a high-kgate dielectric layer, wherein the logic gate dielectric has a topsurface disposed below a bottom surface of the metal gate electrode andseparated therefrom by the high-k gate dielectric layer; a sidewallspacer disposed on an upper surface of the substrate, having a firstportion along outer sidewalls of the control gate electrode and theselect gate electrode, and a second portion along sidewalls of the metalgate electrode; and a memory gate dielectric seamlessly disposed underthe control gate electrode and the select gate electrode and havingsidewalls vertically flushed with opposite sidewalls of the control gateelectrode and the select gate electrode.
 10. The IC of claim 9, furthercomprising: a charge trapping layer separating opposing sidewalls of thecontrol gate electrode and the select gate electrode and extendinglaterally between the control gate electrode and the memory gatedielectric.
 11. An integrated circuit (IC), comprising: a substrateincluding a logic region and a memory region adjacent to the logicregion; a logic device in the logic region comprising a logic gateelectrode over a logic gate dielectric; and a non-volatile memory (NVM)device in the memory region comprising a select gate electrode and acontrol gate electrode one next to another and over a memory gatedielectric; wherein the memory gate dielectric seamlessly disposed underboth the control gate electrode and the select gate electrode with theentire top surface being a planar shape.
 12. The IC of claim 11, furthercomprising: a charge trapping layer separating opposing sidewalls of thecontrol gate electrode and the select gate electrode; wherein the chargetrapping layer is disposed between the control gate electrode and thememory gate dielectric such that the charge trapping layer directlycontacts a bottom surface of the control gate electrode and a topsurface of the memory gate dielectric.
 13. The IC of claim 12, furthercomprising: a sidewall spacer disposed directly on an upper surface ofthe substrate; wherein the sidewall spacer has a first portion alongouter sidewalls of the control gate electrode and the select gateelectrode, and a second portion along sidewalls of the logic gateelectrode.
 14. The IC of claim 13, further comprising a cap spacerdisposed on a recessed upper surface of the control gate electrode. 15.The IC of claim 14, wherein the sidewall spacer and the charge trappinglayer extend upwardly to cover sidewalls of the cap spacer.
 16. The ICof claim 11, wherein the memory gate dielectric has a planar top surfaceextending from a first position under the control gate electrode to asecond position under the select gate electrode.
 17. The IC of claim 11,wherein sidewalls of the memory gate dielectric are vertically alignedwith outermost sidewalls of the control gate electrode and the selectgate electrode.
 18. The IC of claim 11, wherein the select gateelectrode is made of a first polysilicon layer directly on the memorygate dielectric and have a substantially constant thickness.
 19. The ICof claim 11, wherein the control gate electrode and the select gateelectrode have planar top surfaces aligned with a planar top surface ofthe logic gate electrode.
 20. The IC of claim 11, further comprising acontact etch stop layer between the logic region and the memory regionwith a ‘U’ shaped structure.